Silica Zinc Titanate Wide Bandgap Semiconductor Nanocrystallites: Synthesis and Characterization
نویسندگان
چکیده
Abstract SiO 2 x:ZnO: (1-x)TiO nanocrystallites were made via sol-gel route, and co-firing at a lower temperature (600 o C). The synthesized characterized using several analytical techniques including XRD, SEM/TEM, FT IR, THz, UV–visible spectroscopy analysis. results appear that the silicate phase was used to promote density of nanocrystalline ceramic during calcination. calcined (∼600 C) consist ZnTiO 3 , Zn 4 TiO phases, with dominant rhombohedral phase, showing various electronic transitions. obvious properties give 2.8 eV as indirect bandgap transition 3.35 ± 0.01 direct increase silica content. dielectric constant is in range 8 frequency higher than 10 Hz due formation ac conductivity − 7 S/cm.
منابع مشابه
Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
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ژورنال
عنوان ژورنال: Silicon
سال: 2022
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-022-01886-2